MT41J256M8HX-15E IT:D Micron Technology Inc, MT41J256M8HX-15E IT:D Datasheet - Page 13

• Manufacturer Part Number: MT41J256M8HX-15E IT:D
• Description: MICMT41J256M8HX-15E_IT:D 2GB DDR3 SDRAM
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M8HX-15E IT:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: -40C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 165mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
• Complete functionality may be described throughout the document; any page or dia-
• Any specific requirement takes precedence over a general statement.
• Any functionality not specifically stated is considered undefined, illegal, and not sup-
• Row addressing is denoted as A[n:0]. For example,1Gb: n = 12 [x16]; 1Gb: n = 13 [x4,
• A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be
gram may have been simplified to convey a topic and may not be inclusive of all
requirements.
ported, and can result in unknown operation.
x8]; 2Gb: n = 13 [x16] and 2Gb: n = 14 [x4, x8]; . 4Gb: n = 14 [x16] and 4Gb: n = 15 [x4, x8].
used, use the lower byte for data transfers and terminate the upper byte as noted:
– Connect UDQS to ground via 1K* resistor.
– Connect UDQS# to V
– Connect UDM to V
– Connect DQ 8–15 individually to either V
DQ 8–15.
*If ODT is used, 1K resistor should be changed to 4X that of the selected ODT.
DD
DD
via 1K* resistor.
via 1K* resistor.
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SS
2Gb: x4, x8, x16 DDR3 SDRAM
, V
DD
, or V
Functional Description
REF
via 1K resistors,* or float
© 2006 Micron Technology, Inc. All rights reserved.