SI4420BDY-T1-E3 Siliconix / Vishay, SI4420BDY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4420BDY-T1-E3
• Description: MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.007Ohm; ID 9.5A; SO-8; PD 1.4W; VGS +/-20V; -55
• Manufacturer: Siliconix / Vishay

Specifications of SI4420BDY-T1-E3

• Channel Type: N-Channel
• Current, Drain: 9.5 A
• Fall Time: 12 nS
• Gate Charge, Total: 16 nC
• Mounting And Package Type: SO-8 Package
• Operating And Storage Temperature: -55 to +150 °C
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 1.4 W
• Resistance, Drain To Source On: 0.007 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 50 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Diode Forward: 0.75 V (Typ.)
• Voltage, Forward, Diode: 0.75 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Si4420BDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
50
45
40
35
30
25
20
15
10
b
5
0
0
1
V
a
DS
a
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
a
= 10 thru 4 V
J
2
= 25 °C, unless otherwise noted
a
Symbol
V
r
3
I
DS(on)
t
t
I
I
D(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
Q
DSS
g
Q
R
t
t
SD
t
rr
fs
gs
gd
r
f
gt
g
g
4
V
V
3 V
V
DS
I
DS
DS
D
I
≅ 1 A, V
= 15 V, V
F
= 15 V, V
V
= 30 V, V
V
V
V
V
V
V
= 2.3 A, di/dt = 100 A/µs
V
DS
5
DS
I
GS
DS
S
DD
DS
DS
GS
Test Conditions
= 2.3 A, V
= 0 V, V
= V
= 10 V, I
= 15 V, I
= 30 V, V
≥ 5 V, V
= 15 V, R
= 4.5 V, I
GEN
GS
GS
GS
GS
, I
= 10 V, I
= 10 V, R
= 5 V, I
= 0 V, T
GS
D
GS
D
D
GS
= 250 µA
GS
D
L
= 13.5 A
= 13.5 A
= ± 20 V
= 10 V
= 11 A
= 15 Ω
= 0 V
= 0 V
D
D
J
= 13.5 A
g
= 55 °C
= 13.5 A
= 6 Ω
40
35
30
25
20
15
10
5
0
0.0
0.5
V
Min
GS
1.0
0.5
30
1.0
Transfer Characteristics
- Gate-to-Source Voltage (V)
1.5
0.007
0.009
0.75
Typ
T
6.6
4.0
1.0
50
16
31
15
11
40
12
30
C
2.0
25 °C
= 125 °C
2.5
0.0085
0.0110
± 100
Max
3.0
1.1
1.5
25
50
25
18
60
20
50
1
5
3.0
3.5
- 55 °C
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
4.0