SI4876DY-T1-E3 Siliconix / Vishay, SI4876DY-T1-E3 Datasheet
SI4876DY-T1-E3
Manufacturer Part Number
SI4876DY-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.0037Ohm; ID 14A; SO-8; PD 1.6W; VGS +/-12V; -55
Manufacturer
Siliconix / Vishay
Datasheet
1.SI4876DY-T1-E3.pdf
(2 pages)
Specifications of SI4876DY-T1-E3
Channel Type
N
Current, Drain
21.00 A
Gate Charge, Total
55 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
1.6 W
Resistance, Drain To Source On
0.005 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
175 ns
Time, Turn-on Delay
40 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
20 V
Voltage, Drain To Source
20 V
Voltage, Forward, Diode
0.8 V
Voltage, Gate To Source
±12 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4876DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4876DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
Ordering Information: Si4876DY
20
20
(V)
J
ti
G
S
S
S
t A bi
1
2
3
4
J
J
LEERER MERKER
LEERER MERKER
0.0075 @ V
Si4876DY-T1 (with Tape and Reel)
0.005 @ V
= 150_C)
= 150_C)
t
Top View
LEERER MERKER
LEERER MERKER
SO-8
Parameter
Parameter
r
DS(on)
LEERER MERKER
LEERER MERKER
GS
GS
(W)
N-Channel 20-V (D-S) MOSFET
= 4.5 V
= 2.5 V
8
7
6
5
LEERER MERKER
D
D
D
D
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 85_C
= 25_C
= 85_C
D
21
17
(A)
_
Symbol
Symbol
T
G
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
AS
S
D
D
stg
N-Channel MOSFET
D TrenchFETr Power MOSFET
D 100% R
D
S
10 secs
Typical
3.6
1.9
21
15
29
67
13
3
g
Tested
–55 to 150
"12
20
50
42
88
Steady State
Maximum
Vishay Siliconix
1.3
1.6
0.8
14
10
35
80
16
Si4876DY
Unit
Unit
_C/W
mS
C/W
mJ
_C
W
W
V
V
A
A
1
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SI4876DY-T1-E3 Summary of contents
Page 1
... GS SO Top View Ordering Information: Si4876DY Si4876DY-T1 (with Tape and Reel) Parameter Drain-Source Voltage Gate-Source Voltage LEERER MERKER LEERER MERKER Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) ...
Page 2
... Si4876DY Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current LEERER MERKER On-State Drain Current Drain-Source On-State Resis- Drain Source On State Resis LEERER MERKER LEERER MERKER tance t LEERER MERKER Forward Transconductance ...