SI4876DY-T1-E3 Siliconix / Vishay, SI4876DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4876DY-T1-E3
• Description: MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.0037Ohm; ID 14A; SO-8; PD 1.6W; VGS +/-12V; -55
• Manufacturer: Siliconix / Vishay

Specifications of SI4876DY-T1-E3

• Channel Type: N
• Current, Drain: 21.00 A
• Gate Charge, Total: 55 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 1.6 W
• Resistance, Drain To Source On: 0.005 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 175 ns
• Time, Turn-on Delay: 40 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: 20 V
• Voltage, Drain To Source: 20 V
• Voltage, Forward, Diode: 0.8 V
• Voltage, Gate To Source: ±12 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes
a.
b.
Si4876DY
Vishay Siliconix
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resis-
Drain Source On State Resis
t
tance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
LEERER MERKER
LEERER MERKER
50
40
30
20
10
0
0.0
LEERER MERKER
Parameter
0.5
V
GS
V
LEERER MERKER
LEERER MERKER
DS
1.0
= 5 thru 2.5 V
Output Characteristics
– Drain-to-Source Voltage (V)
LEERER MERKER
1.5
2.0
2.5
_
Symbol
V
r
r
3.0
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
2.0 V
1.5 V
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
_
3.5
4.0
V
V
I
DS
D
DS
^ 1 A, V
= 10 V, V
V
I
= 16 V, V
V
V
V
F
V
V
V
V
V
DS
DS
DS
Test Condition
GS
= 3 A, di/dt = 100 A/ms
DS
GS
I
DD
DD
DS
S
= 0 V, V
w 5 V, V
= V
= 3 A, V
= 4.5 V, I
= 16 V, V
= 10 V, I
= 10 V, R
= 10 V, R
= 2.5 V, I
GEN
GS
GS
GS
, I
= 10 V, R
GS
= 4.5 V, I
= 0 V, T
D
GS
GS
D
GS
D
L
L
= 250 mA
D
= "12 V
= 21 A
= 0 V
= 10 W
= 10 W
= 17 A
= 4.5 V
= 21 A
= 0 V
J
G
D
= 85_C
50
40
30
20
10
= 21 A
= 6 W
0
0.0
0.5
V
GS
Transfer Characteristics
– Gate-to-Source Voltage (V)
Min
0.6
2.0
50
T
25_C
C
1.0
= 125_C
0.0037
0.0058
Typ
175
0.8
2.7
17
55
13
40
30
70
56
11
1.5
0.0075
Max
"100
0.005
260
105
1.2
4.6
20
80
60
45
85
1
–55_C
2.0
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
2.5