PMD3001D T/R NXP Semiconductors, PMD3001D T/R Datasheet

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PMD3001D T/R

Manufacturer Part Number
PMD3001D T/R
Description
MOSFET & Power Driver ICs MOSFET DRIVER TAPE 7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMD3001D T/R

Maximum Power Dissipation
580 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
PMD3001D,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package.
I
I
I
I
I
I
I
I
Table 1.
Symbol
Per transistor; for the PNP transistor with negative polarity
V
I
I
C
CM
CEO
PMD3001D
MOSFET driver
Rev. 02 — 28 August 2009
Low V
Application-optimized pinout
Space-saving solution
Internal connections to minimize layout effort
Reduces component count
MOSFET driver
Power bipolar transistor driver
Output current booster for operational amplifier
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
Breakthrough In Small Signal (BISS) transistors in push-pull configuration
Conditions
open base
single pulse;
t
p
1 ms
Min
-
-
-
Typ
-
-
-
Product data sheet
Max
40
1
2
Unit
V
A
A

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PMD3001D T/R Summary of contents

Page 1

PMD3001D MOSFET driver Rev. 02 — 28 August 2009 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low V I Application-optimized pinout I ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PMD3001D 4. Marking Table 4. Type number PMD3001D PMD3001D_2 Product data sheet Pinning Description base TR1, TR2 collector TR2 collector TR2 emitter TR1, TR2 collector TR1 collector TR1 Ordering information Package Name ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor; for the PNP transistor with negative polarity V CBO V CEO Per device P tot amb T stg [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm [3] Device mounted on a ceramic PCB duty cycle = Z 1 th(j-a) (K/W) ...

Page 5

... NXP Semiconductors 3 10 duty cycle = Z th(j-a) 1 (K/W) 0.75 0 0.33 0.2 0.1 0.05 10 0.02 0. FR4 PCB, mounting pad for collector 1cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 3 10 duty cycle = Z th(j-a) (K/ 0.5 0.33 ...

Page 6

... NXP Semiconductors 7. Characteristics Table unless otherwise specified amb Symbol Parameter Per NPN transistor I CBO CEsat V BEsat V BE Per PNP transistor I CBO CEsat V BEsat V BE PMD3001D_2 Product data sheet Characteristics Conditions collector-base cut-off current 150 current gain collector-emitter I = 100 mA saturation voltage I = 500 mA ...

Page 7

... NXP Semiconductors Table unless otherwise specified amb Symbol Parameter Per device off [1] Pulse test: t PMD3001D_2 Product data sheet Characteristics …continued Conditions delay time rise time turn-on time storage time fall time turn-off time 300 s; 0.02 p Rev. 02 — 28 August 2009 ...

Page 8

... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 5. TR1 (NPN): DC current gain as a function of collector current; typical values 1 (V) (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 100 C amb Fig 7. TR1 (NPN): Base-emitter voltage as a function of collector current; typical values ...

Page 9

... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 9. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PMD3001D_2 Product data sheet 006aaa790 V CEsat ( (mA) C (1) I (2) I (3) I Fig 10. TR1 (NPN): Collector-emitter saturation Rev. 02 — 28 August 2009 PMD3001D ...

Page 10

... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb Fig 11. TR2 (PNP): DC current gain as a function of collector current; typical values 1 (V) (1) 0.8 (2) 0.6 (3) 0 amb ( amb ( 100 C amb Fig 13. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values ...

Page 11

... NXP Semiconductors 1 V CEsat (V) 1 (1) 10 ( 100 C amb ( amb ( amb Fig 15. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 8. Test information Fig 17. Test circuit for switching times PMD3001D_2 Product data sheet 006aaa796 V CEsat (mA) C Fig 16. TR2 (PNP): Collector-emitter saturation ...

Page 12

... NXP Semiconductors 9. Package outline Fig 18. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PMD3001D [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 13

... NXP Semiconductors 11. Soldering Fig 19. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 20. Wave soldering footprint SOT457 (SC-74) PMD3001D_2 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 28 August 2009 ...

Page 14

... Document ID Release date PMD3001D_2 20090828 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 20 “Wave soldering footprint SOT457 PMD3001D_1 20060926 ...

Page 15

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 16

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 Revision history ...

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