PMD3001D T/R NXP Semiconductors, PMD3001D T/R Datasheet - Page 3

• Manufacturer Part Number: PMD3001D T/R
• Description: MOSFET & Power Driver ICs MOSFET DRIVER TAPE 7
• Manufacturer: NXP Semiconductors

Specifications of PMD3001D T/R

• Maximum Power Dissipation: 580 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: PMD3001D,115

NXP Semiconductors
5. Limiting values
PMD3001D_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
Per transistor; for the PNP transistor with negative polarity
V
V
I
I
I
Per device
P
T
T
T
C
CM
BM
Fig 1.
j
amb
stg
CBO
CEO
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1cm
(3) FR4 PCB, standard footprint
Power derating curves
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
(mW)
P
Rev. 02 — 28 August 2009
tot
600
400
200
2
O
0
3
, standard footprint
75
25
2
(1)
(2)
(3)
O
3
, standard footprint.
Conditions
open emitter
open base
single pulse;
t
single pulse;
t
T
25
p
p
amb
2
1 ms
1 ms
25 C
75
125
T
006aaa784
amb
[1]
[2]
[3]
( C)
175
Min
-
-
-
-
-
-
-
-
-
-
65
65
PMD3001D
© NXP B.V. 2009. All rights reserved.
Max
40
40
1
2
0.3
1
330
400
580
150
+150
+150
MOSFET driver
Unit
V
V
A
A
A
A
mW
mW
mW
2
C
C
C
.
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