PMD3001D T/R NXP Semiconductors, PMD3001D T/R Datasheet - Page 8

• Manufacturer Part Number: PMD3001D T/R
• Description: MOSFET & Power Driver ICs MOSFET DRIVER TAPE 7
• Manufacturer: NXP Semiconductors

Specifications of PMD3001D T/R

• Maximum Power Dissipation: 580 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: PMD3001D,115

NXP Semiconductors
PMD3001D_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
1.0
0.8
0.6
0.4
0.2
0
10
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
CE
amb
amb
amb
CE
amb
amb
amb
1
1
= 5 V
= 5 V
= 100 C
= 25 C
= 55 C
= 55 C
= 25 C
= 100 C
1
1
10
10
(1)
(2)
(3)
(1)
(2)
(3)
10
10
2
2
10
10
006aaa788
006aaa789
3
3
I
I
C
C
(mA)
(mA)
10
10
Rev. 02 — 28 August 2009
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
2.4
1.6
0.8
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0
T
TR1 (NPN): Collector current as a function of
collector-emitter voltage; typical values
I
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
C
amb
amb
amb
amb
1
/I
B
= 20
= 25 C
= 55 C
= 25 C
= 100 C
IB (mA) = 17
1
1
15.3
13.6
11.9
10.2
8.5
10
2
(1)
(2)
(3)
10
3
2
PMD3001D
© NXP B.V. 2009. All rights reserved.
10
4
006aaa793
006aaa792
3
MOSFET driver
V
I
C
CE
6.8
5.1
3.4
1.7
(mA)
(V)
10
5
4
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