PMV20XN NXP Semiconductors, PMV20XN Datasheet
PMV20XN
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PMV20XN Summary of contents
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... PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ...
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... Simplified outline SOT23 (TO-236AB) Description plastic surface-mounted package; 3 leads Marking code KW% All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Graphic symbol mbb076 Version SOT23 [1] © NXP B.V. 2011. All rights reserved. ...
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... Min - -12 [ °C - [1] = 100 °C - ≤ 10 µ [ -55 -55 -65 [1] - 120 I der (%) −75 − Normalized continuous drain current as a function of junction temperature PMV20XN Max Unit 4 510 mW 930 mW 4170 mW 150 °C 150 °C 150 ° 017aaa124 125 175 T (°C) j © NXP B.V. 2011. All rights reserved. ...
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... Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm PMV20XN Product data sheet 1 2 Conditions in free air All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET 017aaa176 (1) (2) (3) (4) (5) (6) ...
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... FR4 PCB, mounting pad for drain 6 cm Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV20XN Product data sheet – – All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET 017aaa177 (s) p 017aaa178 ...
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... 150 ° 2 ° ° 4 ° MHz ° Ω 5 G(ext ° 4 ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Min Typ Max 0 100 - - 100 - 585 - - 110 - - 128 ...
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... V 1 (V) DS Fig 7. 017aaa181 R DSon (mΩ (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET –3 –4 (1) (2) (3) –5 –6 0.0 0.5 1.0 1 ° (1) minimum values (2) typical values (3) maximum values ...
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... V, 4.8 A N-channel Trench MOSFET 1.8 a 1.4 1.0 0.6 – function of junction temperature; typical values (pF – MHz (1) C iss (2) C oss (3) C rss as a function of drain-source voltage; typical values PMV20XN 017aaa184 120 180 T (°C) j 017aaa186 (1) (2) ( (V) DS © NXP B.V. 2011. All rights reserved ...
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... Fig 16. Source current as a function of source-drain voltage; typical values PMV20XN Product data sheet 017aaa187 (nC °C Fig 15. Gate charge waveform definitions ( (1) ( 0.0 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) 017aaa188 1.2 V (V) SD © ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition PMV20XN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC JEITA TO-236AB All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION ...
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... All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot023_fr solder lands solder resist occupied area ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMV20XN v.1 20110405 PMV20XN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 5 April 2011 PMV20XN 30 V, 4.8 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMV20XN All rights reserved. Date of release: 5 April 2011 Document identifier: PMV20XN ...