PMV20XN NXP Semiconductors, PMV20XN Datasheet - Page 7

• Manufacturer Part Number: PMV20XN
• Description: MOSFET, N CH, 30V, 4.8A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV20XN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.019ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V

NXP Semiconductors
PMV20XN
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
I
D
20
15
10
80
60
40
20
5
0
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
Drain-source on-state resistance as a function
0
2
j
j
= 25 °C
= 25 °C
GS
GS
GS
GS
GS
GS
(1)
= 1.7 V
= 1.8 V
= 1.9 V
= 2.5 V
= 3.0 V
= 4.5 V
4.5 V
2.5 V
1
(2)
8
(3)
(4)
(5)
(6)
2
V
14
GS
1.8 V
1.6 V
1.4 V
= 2 V
3
I
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D
V
017aaa179
017aaa181
DS
(A)
(V)
20
4
Rev. 1 — 5 April 2011
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
10
10
10
10
D
80
60
40
20
–3
–4
–5
–6
0
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
D
j
= 25 °C; V
= 5.7 A
j
j
= 150 °C
= 25 °C
(1)
30 V, 4.8 A N-channel Trench MOSFET
0.5
2
DS
(2)
= 5 V
1.0
4
(3)
PMV20XN
1.5
6
© NXP B.V. 2011. All rights reserved.
V
V
(1)
(2)
017aaa180
017aaa182
GS
GS
(V)
(V)
2.0
8
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