PMV20XN NXP Semiconductors, PMV20XN Datasheet - Page 3

• Manufacturer Part Number: PMV20XN
• Description: MOSFET, N CH, 30V, 4.8A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV20XN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.019ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
PMV20XN
Product data sheet
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
D
DM
S
Fig 1.
j
amb
stg
DS
GS
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
P
(%)
der
120
80
40
0
−75
function of junction temperature
Normalized total power dissipation as a
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
−25
25
75
125
All information provided in this document is subject to legal disclaimers.
017aaa123
T
j
(°C)
175
Conditions
T
V
V
T
T
T
T
j
amb
amb
sp
amb
GS
GS
Rev. 1 — 5 April 2011
= 25 °C
= 25 °C
= 4.5 V; T
= 4.5 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Fig 2.
amb
amb
(%)
I
der
= 25 °C
= 100 °C
120
80
40
0
−75
function of junction temperature
Normalized continuous drain current as a
p
30 V, 4.8 A N-channel Trench MOSFET
≤ 10 µs
−25
25
[1]
[1]
[2]
[1]
[1]
75
Min
-
-12
-
-
-
-
-
-
-55
-55
-65
-
PMV20XN
125
© NXP B.V. 2011. All rights reserved.
017aaa124
T
j
2
150
150
Max
30
12
4.8
3
20
510
930
4170
150
1
(°C)
.
175
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
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