NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 19

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND01G-B2C
Table 7.
1. Any additional address input cycles will be ignored.
Table 8.
Table 9.
cycle
Bus
2
3
1
4
nd
st
rd
th
(1)
I/O15
I/O8-
X
X
X
X
Address insertion, x16 devices
Address definitions, x8 devices
Address definitions, x16 devices
A12 - A17
A18 - A27
A11 - A16
A17 - A26
Address
A0 - A11
Address
A0 - A10
I/O7
A18
A26
V
A7
IL
I/O6
A17
A25
V
A6
IL
I/O5
A16
A24
V
A5
IL
I/O4
A15
A23
A4
V
IL
I/O3
A14
A22
V
A3
IL
Column address
Column address
Block address
Page address
Block address
Page address
Definition
Definition
I/O2
A10
A13
A21
A2
Bus operations
I/O1
A12
A20
A1
A9
I/O0
A11
A19
A0
A8
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