NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 21

no-image

NAND01GR3B2CZA6E

Manufacturer Part Number
NAND01GR3B2CZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of NAND01GR3B2CZA6E

Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Program/erase Volt (typ)
1.7 to 1.95V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
128M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
ST
Quantity:
104
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Numonyx
Quantity:
70
Part Number:
NAND01GR3B2CZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
NAND01GR3B2CZA6E
0
Company:
Part Number:
NAND01GR3B2CZA6E
Quantity:
23 000
NAND01G-B2C
6
6.1
6.1.1
6.1.2
Device operations
The following section gives the details of the device operations.
Read memory array
At power-up the device defaults to read mode. To enter read mode from another mode the
Read command must be issued, see
Once a Read command is issued two types of operations are available: random read and
page read.
Random read
Each time the Read command is issued the first read is random read.
Page read
After the first random read access, the page data (2112 bytes or 1056 words) is transferred
to the page buffer in a time of t
complete the Ready/Busy signal goes High. The data can then be read out sequentially
(from selected column address to last column address) by pulsing the Read Enable signal.
Alternatively, the user may check the transfer completion by issuing the Read Status
Register command and checking SR6 by toggling R. In the latter case, the device will keep
on outputting the read status register until the 00h command is issued.
The device can output random data in a page, instead of the consecutive sequential data, by
issuing a Random Data Output command.
The Random Data Output command can be used to skip some data during a sequential
data output.
The sequential operation can be resumed by changing the column address of the next data
to be output, to the address which follows the Random Data Output command.
The Random Data Output command can be issued as many times as required within a
page.
The Random Data Output command is not accepted during cache read operations.
WHBH
(refer to
Table 10:
Table 25
Commands.
for value). Once the transfer is
Device operations
21/67

Related parts for NAND01GR3B2CZA6E