MPR083Q Freescale Semiconductor, MPR083Q Datasheet - Page 24

• Manufacturer Part Number: MPR083Q
• Description: IC CTLR TOUCH SENSOR PROX 16-QFN
• Manufacturer: Freescale Semiconductor
• Type: Capacitiver

Specifications of MPR083Q

• Number Of Inputs/keys: 8 Slider
• Data Interface: I²C, Serial
• Voltage - Supply: 1.8 V ~ 3.6 V
• Current - Supply: 1.62mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-QFN Exposed Pad
• Output Type: Voltage
• Interface: I²C
• Input Type: Logic
• Supply Voltage: 3.3 V
• Dimensions: 5 mm L x 5 mm W x 1 mm H
• Supply Current: 41µA
• Ic Interface Type: I2C
• Supply Voltage Range: 1.8V To 3.6V
• Sensor Case Style: QFN
• No. Of Pins: 16
• Operating Temperature Range: -40°C To +85°C
• Filter Terminals: SMD
• Rohs Compliant: Yes
• For Use With: DEMOMPR083 - BOARD DEMO FOR MPR083 CTLRKITMPR083EVM - KIT EVAL 8POSITION ROTARY TOUCH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MPR083
24
Appendix A Electrical Characteristics
A.1
This section contains electrical and timing specifications.
A.2
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table A-1 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section. This device contains circuitry protecting against damage due to high static
voltage or electrical fields; however, it is advised that normal precautions be taken to avoid application of any voltages higher
than maximum-rated voltages to this high-impedance circuit.
A.3
Normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without
suffering any permanent damage. During the device qualification ESD stresses were performed for the Human Body Model
(HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table 19. Absolute Maximum Ratings - Voltage (with respect to VSS)
Supply Voltage
Input Voltage
Operating Temperature Range
Storage Temperature Range
Introduction
Absolute Maximum Ratings
ESD and Latch-up Protection Characteristics
SCL, SDA, AD0, IRQ, ATTN,
SOUNDER
Table 20. ESD and Latch-up Test Conditions
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up current at T
Rating
Rating
A
= 85°C
Symbol
TSG
V
T
V
DD
SG
IN
Symbol
I
V
V
V
LATCH
ESD
ESD
ESD
VSS - 0.3 to VDD + 0.3
-0.3 to +3.8
-55 to +150
±2000
Value
-40 to +85
±200
±500
±100
Value
Unit
mA
V
V
V
Freescale Semiconductor
Unit
°C
°C
V
V
Sensors