MT47H128M16RT-3:C Micron Technology Inc, MT47H128M16RT-3:C Datasheet - Page 23

• Manufacturer Part Number: MT47H128M16RT-3:C
• Description: IC DDR2 SDRAM 2GB 667HZ 84FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H128M16RT-3:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (128M x 16)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. F 12/10 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: BA[2:0], A[14:0] (A[13:0] on
x16), CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank
address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM,
NF
Notes:
1. This parameter is sampled. V
2. The capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.25pF for -3/-3E speed devices.
MHz, T
with I/O balls, reflecting the fact that they are matched in loading.
any given device.
C
= 25°C, V
Symbol
OUT(DC)
C
C
C
C
C
DCK
C
DIO
CK
DI
IO
I
= V
23
DD
DDQ
= +1.8V ±0.1V, V
/2, V
Min
1.0
1.0
2.5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
–
OUT
(peak-to-peak) = 0.1V. DM input is grouped
2Gb: x4, x8, x16 DDR2 SDRAM
DDQ
Max
0.25
0.25
2.0
2.0
4.0
0.5
= +1.8V ±0.1V, V
© 2006 Micron Technology, Inc. All rights reserved.
Units
pF
pF
pF
pF
pF
pF
REF
= V
Packaging
SS
, f = 100
Notes
2, 3
2, 3
1, 4
2, 3
1
1