MT47H128M16RT-3:C Micron Technology Inc, MT47H128M16RT-3:C Datasheet - Page 50

• Manufacturer Part Number: MT47H128M16RT-3:C
• Description: IC DDR2 SDRAM 2GB 667HZ 84FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H128M16RT-3:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 2G (128M x 16)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 84-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 20: Output Characteristics
Figure 16: Output Slew Rate Load
PDF: 09005aef824f87b6
2gbddr2.pdf – Rev. F 12/10 EN
Parameter
Output impedance
Pull-up and pull-down mismatch
Output slew rate
Notes:
Output
(V
OUT
1. Absolute specifications: 0°C ≤ T
2. Impedance measurement conditions for output source DC current: V
3. Mismatch is an absolute value between pull-up and pull-down; both are measured at
4. Output slew rate for falling and rising edges is measured between V
5. The absolute value of the slew rate as measured from V
6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when T
V
V
rent: V
between 0V and 280mV.
the same temperature and voltage.
V
rate is measured between DQS - DQS# = –500mV and DQS# - DQS = +500mV. Output
slew rate is guaranteed by design but is not necessarily tested on each device.
or greater than the slew rate as measured from V
teed by design and characterization.
40°C and 0°C.
V
)
OUT
DDQ
TT
TT
Output Electrical Characteristics and Operating Conditions
+ 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew
=
= 1420mV; (V
and V
V
DDQ
DDQ
25Ω
Reference
point
= 1.7V; V
DDQ
/2
- 280mV. The impedance measurement condition for output sink DC cur-
Min
See Output Driver Characteristics (page 51)
1.5
0
OUT
OUT
- V
= 280mV; V
DDQ
50
)/I
OH
C
≤ +85°C; V
must be less than 23.4Ω for values of V
OUT
Nom
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
/I
OL
must be less than 23.4Ω for values of V
DDQ
2Gb: x4, x8, x16 DDR2 SDRAM
= +1.8V ±0.1V, V
IL(AC)max
Max
IL(DC)max
4
5
to V
© 2006 Micron Technology, Inc. All rights reserved.
IH(AC)min
DD
to V
= +1.8V ±0.1V.
IH(DC)min
DDQ
TT
Units
. This is guaran-
V/ns
- 250mV and
Ω
Ω
= 1.7V;
C
OUT
is between –
is equal to
between
1, 4, 5, 6
Notes
1, 2, 3
1, 2
OUT