BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 10

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT404 (D2PAK)
BUK7608-55A
Product data sheet
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
D
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
All information provided in this document is subject to legal disclaimers.
E
JEDEC
1.60
1.20
D 1
2
e
REFERENCES
10.30
9.70
Rev. 03 — 14 June 2010
E
3
0
b
2.54
e
JEITA
scale
2.5
2.90
2.10
L p
5 mm
15.80
14.80
H D
N-channel TrenchMOS standard level FET
mounting
2.60
2.20
Q
base
L p
A 1
Q
PROJECTION
c
EUROPEAN
BUK7608-55A
A
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
05-02-11
06-03-16
SOT404
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