BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 9

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
20
V
DD
= 14 (V)
40
(A)
I
S
100
80
60
40
20
V
0
60
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 44 (V)
G
(nC)
03nh41
0.2
80
Rev. 03 — 14 June 2010
0.4
T
j
0.6
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
0.8
7000
6000
5000
4000
3000
2000
1000
0
T
10
as a function of drain-source voltage; typical
values
j
= 25 °C
−2
1.0
N-channel TrenchMOS standard level FET
V
SD
03nh40
(V)
1.2
10
−1
C
C
C
rss
iss
oss
BUK7608-55A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03nh47
(V)
10
2
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