BUK7608-55A NXP Semiconductors, BUK7608-55A Datasheet - Page 4

• Manufacturer Part Number: BUK7608-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK7608-55A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.008Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Power Dissipation: 254W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
140
120
100
80
60
40
20
0
25
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Capped at 75 A due to package
50
(A)
I
75
D
10
10
10
1
3
2
1
Capped at 75 A due to package
100
125
R
DSon
150
= V
T
All information provided in this document is subject to legal disclaimers.
mb
DS
175
(°C)
/ I
03nh50
D
200
Rev. 03 — 14 June 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
50
(V)
t
p
100 μs
10 ms
100 ms
1 ms
BUK7608-55A
100
= 10 μs
03nh48
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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