TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 32

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Table 10.
6.0
6.1
Warning:
Table 11.
18 Aug 2005
32
Symbol
GND
V
NC
PP
B3 Flash memory Device Signal Descriptions (Sheet 2 of 2)
Maximum Ratings and Operating Conditions
Absolute Maximum Ratings
Stressing the flash memory device beyond the Absolute Maximum Ratings in
permanent damage. These ratings are stress ratings only.
Absolute Maximum Ratings
NOTICE: Specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest
datasheet before finalizing a design
Extended Operating Temperature
Storage Temperature
Voltage On Any Pin (except V
V
V
Output Short Circuit Current
Notes:
1.
2.
3.
4.
Power
PP
CC
Type
—
—
During Read
During Block Erase and Program
Temperature under Bias
Voltage (for Block Erase and Program) with Respect to GND
and V
Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level might
undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is
V
Maximum DC voltage on V
V
can be done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the
parameter blocks during program/erase. V
hours maximum.
Output shorted for no more than one second. No more than one output shorted at a time.
CC
PP
CCQ
PROGRAM/ERASE Power Supply: Supplies power for Program and Erase operations. V
be the same as V
manufacturing, 11.4 V to 12.6 V can be supplied to V
12.6 V can be applied to V
cycles on the parameter blocks. V
(see
V
commands.
Ground: For all internal circuitry. All ground inputs must be connected.
No Connect: Pin can be driven or left floating.
Program voltage is typically 1.65 V to 3.6 V. Connection to a 11.4 V to 12.6 V supply
PP
+0.5 V which, during transitions, might overshoot to V
Intel
Supply Voltage with Respect to GND
< V
Section 13.0, “V
PPLK
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
protects memory contents against inadvertent or unintended program and erase
Parameter
CC
CC
.
(2.7 V to 3.6 V) for single supply voltage operation. For fast programming at
PP
and V
PP
Program and Erase Voltages” on page 63
PP
might overshoot to +14.0 V for periods <20 ns.
PP
only for a maximum of 1000 cycles on the main blocks and 2500
) with Respect to GND
PP
can be connected to 12 V for a total of 80 hours maximum
PP
Description
can be connected to 12 V for a total of 80
PP
. This pin cannot be left floating. 11.4 V to
CC
+2.0 V for periods <20 ns.
–65 °C to +125 °C
Maximum Rating
–0.5 V to +13.5 V
–40 °C to +85 °C
–40 °C to +85 °C
–40 °C to +85 °C
–0.5 V to +3.7 V
–0.2 V to +3.6 V
for details).
100 mA
Table 11
Datasheet
can cause
Notes
PP
1,2,3
1
4
can