TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 36

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
7.2
Table 14.
18 Aug 2005
36
Symbol
V
V
V
V
V
V
V
V
V
Notes:
1.
2.
IL
IH
OL
OH
PPLK
PP1
PP2
LKO
LKO2
Erase and Program are inhibited when V
V
2500 cycles on the parameter blocks. V
PP
Input Low
Voltage
Input High
Voltage
Output Low
Voltage
Output High
Voltage
V
Out Voltage
V
Program /
Erase
Operations
V
Erase
Lock
Voltage
V
Erase
Lock
Voltage
Parameter
PP
PP
CC
CCQ
= 11.4 V–12.6 V can be applied during program/erase only for a maximum of 1000 cycles on the main blocks and
Lock-
During
Prog/
Prog/
DC Voltage Characteristics
DC Voltage Characteristics
V
Note
V
1,2
CCQ
1
1
CC
–0.1V
V
Intel
–0.4
1.65
11.4
Min
–0.1
2.0
1.5
1.2
CCQ
2.7 V–3.6 V
2.7 V–3.6 V
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
0.22 V
V
+0.3V
V
Max
12.6
CC
0.1
1.0
3.6
CCQ
PP
PP
*
can be connected to 12 V for a total of 80 hours maximum.
< V
V
V
PPLK
CCQ
CCQ
0.4V
0.1V
–0.4
1.65
-0.1
11.4
Min
1.5
1.2
2.7 V–2.85 V
1.65 V–2.5 V
and not guaranteed outside the valid V
–
–
+0.3V
V
Max
12.6
0.4
0.1
1.0
3.6
CCQ
V
V
CCQ
CCQ
–0.4
0.4V
0.1V
1.65
11.4
Min
-0.1
1.5
1.2
2.7 V–3.3 V
1.8 V–2.5 V
–
–
+0.3V
V
Max
12.6
0.4
0.1
1.0
3.6
CCQ
PP
Unit
ranges of V
V
V
V
V
V
V
V
V
V
V
V
I
V
V
I
Complete Write
Protection
OL
OH
Test Conditions
CC
CCQ
CC
CCQ
= 100 µ A
= –100 µ A
= V
= V
PP1
= V
= V
Datasheet
CC
CC
and V
CCQ
CCQ
Min
Min
Min
Min
PP2
.