K6T1008C2E-GB70 Samsung Semiconductor, K6T1008C2E-GB70 Datasheet - Page 4

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K6T1008C2E-GB70

Manufacturer Part Number
K6T1008C2E-GB70
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of K6T1008C2E-GB70

Density
1Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
17b
Package Type
SOP
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
50mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / Rohs Status
Not Compliant

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CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
1. 50 A for Low power product, in case of Low Low power products are comercial=10 A, industrial=15 A.
K6T1008C2E Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: Vcc+3.0V in case of pulse width 30ns.
3. Undershoot: -3.0V in case of pulse width 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Input capacitance
Input/Output capacitance
Supply voltage
Ground
Input high voltage
Input low voltage
Industrial Product: T
Automotive Product T
Item
Item
Item
A
=-40 to 85 C
A
1
=-40 to 125 C, otherwise specified.
A
)
=0 to 70 C
(f=1MHz, TA=25 C)
Symbol
Vcc
Vss
V
V
Symbol
IH
IL
I
I
V
V
I
I
I
CC1
CC2
I
SB1
I
LO
CC
SB
OH
LI
OL
Symbol
V
CS
I
Cycle time=1 s, 100%duty, I
V
Cycle time=Min, 100% duty, I
V
I
I
CS
CS
IO
OL
OH
IN
IN
IN
C
C
=0mA, CS
=2.1mA
=Vss to Vcc
1
=V
=-1.0mA
1
1
IN
IO
=V
=V
0.2V or V
Vcc-0.2V, CS
IH
IH
IH
or V
, CS2=V
or CS
K6T1008C2E Family
K6T1008C2E Family
K6T1008C2E Family
IL
1
=V
IN
2
=V
IL
V
IL
All Family
, CS
Product
CC
, Other inputs=V
IL
2
or OE=V
-0.2V
Vcc-0.2V or CS
2
4
Test Condition
=V
Test Conditions
IH,
V
V
1)
IO
IN
V
IO
IO
IH
=0V
=0V
IN
=0mA, CS
=0mA, CS
or WE=V
=V
IH
IH
2
or V
or V
0.2V, Other inputs=0~Vcc
IL
1
IL
1
IL
=V
, V
, Read
0.2V, CS
IL
IO
, CS
=Vss to Vcc
-0.5
Min
2
4.5
2.2
=V
0
2
Min
3)
-
-
Vcc-0.2V,
IH,
Typ
5.0
CMOS SRAM
0
-
-
Max
Min Typ Max Unit
2.4
-1
-1
6
8
-
-
-
-
-
-
Vcc+0.5
Max
5.5
0.8
-
-
-
-
-
-
-
-
-
0
Revision 4.0
2)
50
0.4
10
50
May 2002
1
1
7
3
Unit
-
pF
pF
1)
Unit
V
V
V
V
mA
mA
mA
mA
V
V
A
A
A

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