IPD09N03LA Infineon Technologies, IPD09N03LA Datasheet - Page 3

• Manufacturer Part Number: IPD09N03LA
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD09N03LA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0088Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 50A
• Power Dissipation: 63W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 2.12
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DS
GS
DD
GS
R
=25 A, R
=25 °C
F
=25 °C
=15 V, I
/dt =400 A/µs
=0.1 V,
=0 V, V
=15 V, V
=15 V, I
=0 to 5 V
=0 to 5 V
=15 V, V
=0 V, I
F
F
G
DS
=50 A,
=I
D
=2.7 Ω
GS
GS
=25 A,
=15 V,
S
=10 V,
=0 V
,
IPS09N03LA G
IPD09N03LA G
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1235
0.97
typ.
474
7.0
5.6
3.4
4.3
2.0
2.8
5.2
3.5
8.7
61
20
10
10
-
-
-
IPU09N03LA G
IPF09N03LA G
max.
1642
630
350
8.4
5.1
5.7
2.6
4.3
7.3
1.2
92
10
30
13
12
14
50
10
-
Unit
pF
ns
nC
V
nC
A
V
nC
2008-04-14