IPD09N03LA Infineon Technologies, IPD09N03LA Datasheet - Page 4

• Manufacturer Part Number: IPD09N03LA
• Manufacturer: Infineon Technologies
• Type: Power MOSFETr

Specifications of IPD09N03LA

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0088Ohm
• Drain-source On-volt: 25V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 50A
• Power Dissipation: 63W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / Rohs Status: Compliant

Rev. 2.12
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
100
70
60
50
40
30
20
10
10
DS
0
1
C
0.1
0
); T
)
C
p
limited by on-state
resistance
=25 °C; D =0
50
1
DC
T
V
C
DS
100
[°C]
[V]
10
100 µs
10 µs
10 ms
1 ms
1 µs
150
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.01
=f(t
0.1
10
60
50
40
30
20
10
C
1
0
10
); V
p
0
0
)
-6
0.02
0.5
0.01
0.2
0.05
0.1
single pulse
GS
≥10 V
10
IPS09N03LA G
p
0
IPD09N03LA G
-5
/T
50
10
0
-4
T
t
C
100
10
p
[°C]
0
[s]
-3
10
IPU09N03LA G
IPF09N03LA G
0
-2
150
10
0
-1
2008-04-14
200
10
1
0