MRF372 Freescale Semiconductor, MRF372 Datasheet - Page 10

• Manufacturer Part Number: MRF372
• Manufacturer: Freescale Semiconductor

Specifications of MRF372

• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 17A
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 17dB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: NI-860C3
• Pin Count: 5
• Forward Transconductance (typ): 2.6S
• Input Capacitance (typ)@vds: 260@32VpF
• Output Capacitance (typ)@vds: 69@32VpF
• Reverse Capacitance (typ): 2.5@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 37%
• Mounting: Screw
• Mode Of Operation: 2-Tone
• Power Dissipation (max): 350000mW
• Vswr (max): 3
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

MRF372R3 MRF372R5
10
20
18
16
14
12
10
V
I
f1 − f2 = 6 MHz
DQ
Figure 12. Power Gain versus Output Power
DD
= 1000 mA
= 32 Vdc
10
G
ps
P
860 MHz
= 660 MHz
out
, OUTPUT POWER (WATTS) PEP
TYPICAL TWO - TONE BROADBAND CHARACTERISTICS
470 MHz
45
40
35
30
25
20
15
10
5
10
Figure 14. Drain Efficiency versus Output Power
V
I
f1 − f2 = 6 MHz
DQ
100
DD
= 1000 mA
= 32 Vdc
P
out
, OUTPUT POWER (WATTS) PEP
h
D
= 860 MHz
100
−10
−15
−20
−25
−30
−35
−40
−45
−50
470 MHz
Figure 13. Intermodulation Distortion versus
V
I
f1 − f2 = 6 MHz
DQ
DD
660 MHz
= 1000 mA
= 32 Vdc
IMD = 470 MHz
10
P
out
, OUTPUT POWER (WATTS) PEP
Output Power
660 MHz
Freescale Semiconductor
860 MHz
100
RF Device Data