MRF372 Freescale Semiconductor, MRF372 Datasheet - Page 2

• Manufacturer Part Number: MRF372
• Manufacturer: Freescale Semiconductor

Specifications of MRF372

• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 17A
• Drain Source Voltage (max): 68V
• Power Gain (typ)@vds: 17dB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: NI-860C3
• Pin Count: 5
• Forward Transconductance (typ): 2.6S
• Input Capacitance (typ)@vds: 260@32VpF
• Output Capacitance (typ)@vds: 69@32VpF
• Reverse Capacitance (typ): 2.5@32VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 37%
• Mounting: Screw
• Mode Of Operation: 2-Tone
• Power Dissipation (max): 350000mW
• Vswr (max): 3
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

MRF372R3 MRF372R5
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Characteristics, Narrowband Operation
Typical Characteristics, Broadband Operation
1. Each side of device measured separately.
2. Measurement made with device in push - pull configuration.
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Forward Transconductance
Input Capacitance (Includes Input Matching Capacitance)
Output Capacitance
Reverse Transfer Capacitance
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 857 MHz, f2 = 863 MHz)
(V
f1 = 857 MHz, f2 = 863 MHz)
(V
f1 = 857 MHz, f2 = 863 MHz)
(V
f1 = 857 MHz, f2 = 863 MHz)
(V
f1 = 857 MHz, f2 = 863 MHz)
(V
f1 = 857 MHz, f2 = 863 MHz)
GS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
= 32 Vdc, V
= 10 V, I
= 32 V, I
= 10 V, I
= 32 V, V
= 32 V, V
= 32 V, V
= 0 Vdc, I
= 5 Vdc, V
= 10 V, I
= 32 V, P
= 32 V, P
= 32 Vdc, P
= 32 Vdc, P
= 32 Vdc, P
= 32 Vdc, P
D
D
D
D
GS
GS
GS
out
out
D
= 200 μA)
= 100 mA)
= 3 A)
= 3 A)
DS
(1)
=10 μA)
GS
out
out
out
out
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
= 180 W PEP, I
= 180 W PEP, I
= 0 Vdc)
= 0 Vdc)
= 180 W PEP, I
= 180 W PEP, I
= 180 W PEP, I
= 180 W PEP, I
Characteristic
(1)
(2)
(1)
(1)
DQ
DQ
DQ
DQ
DQ
DQ
= 800 mA,
= 800 mA,
(T
= 800 mA,
= 1000 mA,
= 1000 mA,
= 1000 mA,
C
= 25°C unless otherwise noted)
(2)
(In Freescale MRF372 Broadband Circuit, 50 ohm system)
(2)
(In Freescale MRF372 Narrowband Circuit, 50 ohm system)
V
Symbol
V
V
V
(BR)DSS
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
DSS
GSS
g
oss
η
η
iss
rss
fs
ps
ps
Min
2.5
68
16
33
—
—
—
—
—
—
—
—
—
—
—
2
0.28
14.5
Typ
260
3.5
2.6
2.5
- 35
- 31
69
17
36
37
—
—
—
3
Freescale Semiconductor
Max
0.45
4.5
- 31
10
—
—
—
—
—
—
—
—
—
—
1
4
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
pF
pF
pF
dB
dB
%
%
S