H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 19

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
2.9. Device Identifier Coding
2.10. Read ID Data Table
2.10.1. 3
Part Number
Number of Simultaneously
H27UAG8T2B
Internal Chip Number
between Multiple dice
Interleaved Program
Programmed Pages
Write Cache
3
Cell Type
Device Identifier Byte
rd
rd
cycle
Parameter
Byte of Device Identifier Description
2
3
4
5
6
Voltage
1
nd
rd
st
th
th
th
3.3V
Not Supported
Not Supported
Description
16 Level Cell
2 Level Cell
4 Level Cell
8 Level Cell
Width
Supported
Supported
Reserved
Bus
X8
1
2
4
1
2
4
8
Manufacture
Internal chip number, cell Type, Number of Simultaneously Pro-
Code
ADh
I/O
grammed Pages, Interleaved Program, Write Cache.
7
0
1
Page size, Block size, Redundant area size
Technology (Design Rule), EDO, Interface
I/O
6
0
1
Device
Code
D5h
Plane Number, ECC Level
16Gb (2048M x 8bit) NAND Flash
Manufacturer Code
I/O
Device Identifier
5
0
0
1
1
Description
Symbol
94h
3
I/O
rd
4
0
1
0
1
I/O
H27UAG8T2B Series
9Ah
3
0
0
1
1
4
th
I/O
2
0
1
0
1
74h
5
th
I/O
1
0
0
1
1
Release
42h
6
I/O
th
0
0
1
0
1
19