H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 54

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
Note:
70h command is prohibited during interleaved operations.
5.5. Interleaved Block Erase
Figure 55 shows how to perform interleaved Block Erase operation.
Note:
70h command is prohibited during interleaved operations.
■ Figure 54. Interleaved multi plane page program
■ Figure 55. Interleaved block erase
R/B#
R/B#
R/B#
R/B#
I/Ox
R/B#
R/B#
(chip 2 internal)
I/Ox
I/Ox
(chip 2 internal)
(external)
(chip 1 internal)
R/B#
R/B#
(chip 1 internal)
(external)
R/B#
(chip 1 internal)
(external)
(chip 2 internal)
60h
A
80h
78h
Address
(3cycle)
Chip 1
Address.
(5cycle)
Chip 1
Add.1
Chip 1
Row.
Data Input
D0h
Add.2
Row.
Add.3
Row.
11h
60h
Status
Address
(3cycle)
Chip 2
80h
81h
Address.
(5cycle)
D0h
Chip 1
Address.
Chip 1
(5cycle)
Data Input
Data Input
11h
10h
80h
16Gb (2048M x 8bit) NAND Flash
81h
Address.
(5cycle)
Chip 2
60h
Address.
(5cycle)
Chip 1
Address
(3cycle)
Data Input
Chip 1
Data Input
11h
D0h
H27UAG8T2B Series
10h
60h
81h
Address
(3cycle)
Chip 2
Address.
(5cycle)
Chip 2
Data Input
D0h
Release
10h
54
A