H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 9

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
1.5. Array Organization
1.6. Addressing
Notes:
■
1. L must be set to Low.
2. The device ignores any additional address input cycle than required.
3. The Address consists of column address (A0~A13), page address (A14 ~ A21), plane address (A22), and
Figure 4. Array organization
Bus cycle
2
3
4
5
1
block address (A23 ~ the last address).
nd
rd
th
th
st
Cycle
Cycle
Cycle
Cycle
Cycle
I/O0
A14
A22
A30
A0
A8
8,192
8,192
Plane 0
1 Block
8,640 bytes
I/O1
A15
A23
A31
A1
A9
448
448
I/O2
A10
A16
A24
L
A2
(1)
Plane 1
8,192
8,192
1 Block
8,640 bytes
I/O3
A11
A17
A25
L
A3
(1)
448
448
16Gb (2048M x 8bit) NAND Flash
I/O4
A12
A18
A26
L
A4
I/O
1 Page = (8,192 + 488 bytes)
1 block = (8,192 + 488) bytes x 256 pages
1 Device = (8,192 + 488) bytes x 256 pages x 1024 block
(1)
0
I/O
= (2M + 112K) bytes
7
= 17,694,720 kbits
I/O5
A13
A19
A27
L
A5
(1)
H27UAG8T2B Series
I/O6
A20
A28
L
L
A6
(1)
(1)
Release
I/O7
A21
A29
L
L
A7
(1)
(1)
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