H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 36

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
3.23. Block Erase Operation Timings
3.24. Multi Plane Erase Operation Timings
■
■
WE#
R/B#
I/Ox
RE#
CLE
CE#
Figure 29. Block erase operation timings
Figure 30. Multi plane erase operation timings
ALE
t
WC
A14 ~ A21 Fixed
A22 : Fixed
A23 ~ A31 : Valid (Block N)
60h
Add1
Row
LOW
Add2
Row
LOW
Add3
Row
60h
Add1
Row
A14 ~ A21 Fixed
A22 : Fixed
A23 ~ A31 : Valid (Block M)
Add2
Row
High
Add3
Row
t
WB
LOW
16Gb (2048M x 8bit) NAND Flash
D0h
t
BERS
H27UAG8T2B Series
t
WHR
70h
IO 0 = 0, pass
IO 0 = 1, fail
Release
Status
Don’t care
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