H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 20

• Manufacturer Part Number: H27UAG8T2ATR-BC
• Description: 58T1891
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UAG8T2ATR-BC

• Memory Type: Flash - NAND
• Memory Size: 16Gbit
• Memory Configuration: 2048M X 8
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Rohs Compliant: Yes

Rev 1.0 / Aug. 2010
2.10.2. 4
2.10.3. 5
(Without Spare Area)
(Without Spare area)
Redundant Area Size
Plane Number
5
ECC Level
Reserved
Block Size
4
Page Size
th
th
cycle
th
th
cycle
Byte of Device Identifier Description
Byte of Device Identifier Description
24bit/2048Bytes
24bit/1024Bytes
16bit/512Bytes
1bit/512Bytes
2bit/512Bytes
4bit/512Bytes
8bit/512Bytes
Description
Description
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
128KB
256KB
512KB
768KB
128B
224B
448B
1MB
2MB
2KB
4KB
8KB
1
2
4
8
I/O
I/O
7
7
0
0
0
0
1
1
1
1
0
I/O
I/O
6
0
0
0
0
1
1
1
1
6
0
0
0
0
1
1
1
1
16Gb (2048M x 8bit) NAND Flash
I/O
I/O
5
5
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
I/O
I/O
4
4
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
I/O
I/O
H27UAG8T2B Series
3
0
0
1
1
0
0
1
1
3
0
0
1
1
I/O
I/O
2
2
0
1
0
1
0
1
0
1
0
1
0
1
I/O
I/O
1
0
0
1
1
1
0
Release
I/O
I/O
0
0
0
1
0
1
0
20