H27UAG8T2ATR-BC HYNIX SEMICONDUCTOR, H27UAG8T2ATR-BC Datasheet - Page 24

58T1891

H27UAG8T2ATR-BC

Manufacturer Part Number
H27UAG8T2ATR-BC
Description
58T1891
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of H27UAG8T2ATR-BC

Memory Type
Flash - NAND
Memory Size
16Gbit
Memory Configuration
2048M X 8
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Rohs Compliant
Yes

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Rev 1.0 / Aug. 2010
Note:
3.4. Data Output Cycle Timings (CLE=L, WE#=H, ALE=L, WP#=H)
Notes:
3.5. Data Output Cycle Timings (EDO type, CLE=L, WE#=H, ALE=L)
Notes:
■ Figure 10. Data output cycle timings (EDO)
R/B#
Data Input cycle is accepted to data register on the rising edge of WE#, when CLE and CE# and ALE are low,
and device is not Busy state.
CE#
RE#
I/Ox
R/B#
1. Transition is measured +/-200mV from steady state voltage with load.
2. t
1. Transition is measured +/-200mV from steady state voltage with load.
CE#
RE#
I/Ox
Figure 9. Data output cycle timings
This parameter is sampled and not 100% tested. ( t
t
This parameter is sampled and not 100% tested. ( t
RLOH
RHOH
is valid when frequency is higher than 33MHz.
starts to be valid when frequency is lower than 33MHz.
t
RR
t
t
CR
RR
t
REA
t
t
RP
REA
Dout
t
RC
t
RC
t
REH
t
REH
t
REA
CHZ
CHZ
Dout
, t
, t
t
RLOH
RHZ
RHZ
Dout
t
)
)
REA
t
RHZ
16Gb (2048M x 8bit) NAND Flash
t
REA
Dout
H27UAG8T2B Series
t
RHOH
t
RHZ
t
CHZ
: Don’t care
t
t
RHOH
RHZ
t
Dout
CHZ
Release
24

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