BSS84AKW,115 NXP Semiconductors, BSS84AKW,115 Datasheet - Page 3

• Manufacturer Part Number: BSS84AKW,115
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BSS84AKW
Product data sheet
Symbol
V
V
I
I
P
T
T
T
Source-drain diode
I
ESD maximum rating
V
D
DM
S
Fig 1.
j
amb
stg
DS
GS
tot
ESD
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
P
(%)
der
120
80
40
0
-75
function of junction temperature
Normalized total power dissipation as a
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
-25
25
75
125
All information provided in this document is subject to legal disclaimers.
001aao121
T
j
(°C)
175
Rev. 1 — 23 May 2011
Conditions
T
V
V
T
T
T
T
HBM
j
amb
amb
sp
amb
GS
GS
= 25 °C
= 25 °C
= -10 V; T
= -10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
Fig 2.
amb
amb
(%)
I
der
120
80
40
= 25 °C
= 100 °C
0
-75
function of junction temperature
Normalized continuous drain current as a
50 V, 150 mA P-channel Trench MOSFET
-25
p
≤ 10 µs
2
25
.
[1]
[1]
[2]
[1]
[1]
[3]
75
BSS84AKW
Min
-
-20
-
-
-
-
-
-
-55
-55
-65
-
-
125
© NXP B.V. 2011. All rights reserved.
001aao122
T
j
150
150
Max
-50
20
-150
-95
-0.6
260
310
830
150
-150
1000
(°C)
175
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
V
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