BSS84AKW,115 NXP Semiconductors, BSS84AKW,115 Datasheet - Page 6

• Manufacturer Part Number: BSS84AKW,115
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
BSS84AKW
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
g
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GSth
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
forward transconductance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
V
V
V
V
V
V
V
V
V
T
V
T
V
R
I
D
D
S
j
j
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
DS
G(ext)
= -10 µA; V
= -250 µA; V
= 25 °C
= 25 °C
= -115 mA; V
= -50 V; V
= -50 V; V
= -10 V; I
= -25 V; I
= -25 V; f = 1 MHz; V
= -30 V; R
= -20 V; V
= 20 V; V
= -10 V; I
= -10 V; I
= -5 V; I
Rev. 1 — 23 May 2011
= 6 Ω; T
D
D
D
D
D
GS
DS
= -100 mA; T
GS
GS
DS
L
DS
j
= -100 mA; T
= -200 mA; V
GS
= -100 mA; T
= -100 mA; T
= 25 °C
= 250 Ω; V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= V
= 0 V; T
GS
; T
j
j
j
j
j
GS
= 25 °C
= 25 °C
j
= 25 °C
= 150 °C
= 25 °C
j
GS
j
= 25 °C
= 25 °C
= 25 °C
= 0 V;
j
j
j
GS
= 25 °C
= 25 °C
= 150 °C
50 V, 150 mA P-channel Trench MOSFET
= -10 V;
= -5 V;
Min
-50
-1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.48
BSS84AKW
Typ
-
-1.6
-
-
-
-
4.5
8
5.7
150
0.26
0.12
0.09
24
4.5
1.3
13
11
48
25
-0.85
© NXP B.V. 2011. All rights reserved.
-
-
-
Max
-
-2.1
-1
-2
-10
-10
7.5
13.5
8.5
-
0.35
-
36
-
26
96
-
-1.2
Unit
V
V
µA
µA
µA
µA
Ω
Ω
Ω
mS
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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