IP5002CX8/LF,135 NXP Semiconductors, IP5002CX8/LF,135 Datasheet - Page 32

• Manufacturer Part Number: IP5002CX8/LF,135
• Description: IC MIC SGL-QUASI-DIFF NTWK 8CSP
• Manufacturer: NXP Semiconductors
• Type: Microphone Channelr

Specifications of IP5002CX8/LF,135

• Applications: Microphone
• Mounting Type: Surface Mount
• Package / Case: 8-CSP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058318135

62
Low V
High voltage low V
1)
Low V
Key features



Package
Size (mm)
P
Package
Size (mm)
P
Collector-emitter peak voltage
tot
tot
Combination of low V
and low V
High forward current capability
Low power dissipation
15
40
15
40
Polarity
(mW)
NPN
(mW)
PNP
Transistor
CEsat
0.5
1.0
2.0
0.5
1.0
2.0
CEsat
CEsat
(BISS) transistors
250
210
400
250
410
530
V
modules — Schottky diode / (BISS) transistor
CESM
(BISS) transistor in one package
500
500
-
-
1)
0.5
0.5
1
1
1
1
Schottky rectifier
F
(MEGA) Schottky rectifier
20
20
20
40
20
20
20
40
V
CEO
CEsat
150
400
500
150
400
500
(V)
390
550
550
640
390
550
550
640
(BISS) transistors
I
C
0.15
0.25
0.15
0.25
0.5
0.4
0.5
Configuration
(A)
1
2
1
1
2
SOT223 (SC-73)
6.5 x 3.5 x 1.65
PBHV8215Z
PBHV8140Z
PBHV8550Z
PBHV9215Z
PBHV9540Z
PBHV9050Z
PBHV8115Z
PBHV8540Z
PBHV9115Z
PBHV9040Z
1700
PMEM4020AND
SOT457 (SC-74)
PMEM4020APD
2.9 x 1.5 x 1.0
PMEM4010ND
PMEM4020ND
PMEM4010PD
PMEM4020PD
Key benefits






500
Reduced component count
Space savings of up to 32 %
Higher efficiency
Higher power density
Cost reduction potential
Simplified circuit design
SOT89 (SC-62)
4.5 x 2.5 x 1.5
types in bold represent new products
PBHV9115X
2.0 x 1.25 x 0.95
PMEM1505NG
PMEM1505PG
1300
SOT353
(SC-88A)
250
2.9 x 1.3 x 1.0
PBHV8115T
PBHV8540T
PBHV9115T
PBHV9040T
PBHV9050T
PMBTA45
SOT23
250
Step-down DC/DC converter
Power LED driver
V
in
TR
R
C
R
TR
TR
Key applications



R
DC/DC conversion
Inductive load driver
Push-pull driver
L
C
C
C
C
C
C
C
C
C
C
V
out
brb104
D
D
D
D
D
D
D
D
D
Low V
Low V
Advantages of low V
Our BISS (Breakthrough In Small-Signal) transistors show lowest V
technology and further technology improvement.
High voltage low V
V
Saturation voltage :
General purpose versus low V
(NPN in SOT23/SOT457)
Package
Size (mm)
P
V
CEsat
tot
CEsat
(V)
1.0
0.8
0.6
0.4
0.2
(mW)
V
0
CEO
1
improvement leads to higher I
40
T
amb
(V)
CEsat
CEsat
= 25 ϒ C
ϒ C
ϒ
(BISS) transistors
(BISS) RETs
I
C
600
(mA)
CEsat
10
high voltage transistor,
(BISS)
new low V
I
standard high voltage
C
I
transistor, I
/I
C
CEsat
R1 = R2
R1 ≠ R2
B
/I
CEsat
B
= 10
CEsat
= 5
C
(BISS) transistors
/I
(BISS) technology
B
10
C
= 10
2
capability
R1 (kΩ)
I
C
(mA)
2.2
2.2
1
1
brb117
10
3
R2 (kΩ)
2.2
10
10
1
PBRN113ET
PBRN123ET
PBRN113ZT
PBRN123YT
Improved collector current capabilities
65 % heat reduction by BISS transistors
General purpose
transistor T
Temperature profile of device surface (T
Comparison of a general purpose transistor and
a 3
NPN
(A)
I
CEsat
C
7
6
5
4
3
2
1
rd
2.9 x 1.3 x 1.0
generation BISS transistor.
values due to an innovative mesh-emitter
SOT23
250
2
1)
nd
50 V type
case
PBRP113ET
PBRP123ET
PBRP113ZT
PBRP123YT
gen. BISS
20 V types
PNP
= 110°C
3
rd
gen. BISS
3
transistor T
60 V types
rd
4
th
generation BISS
gen. BISS
case
).
case
bra865
= 40°C
63