BUK6213-30A NXP Semiconductors, BUK6213-30A Datasheet

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK6213-30A

Manufacturer Part Number
BUK6213-30A
Description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK6213-30A
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BUK6213-30A
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
Symbol
V
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
I
D
DS
tot
DS(AL)S
DSon
GD
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Rev. 03 — 2 February 2011
AEC Q101 compliant
Suitable for logic or standard level
gate drive sources
12 V loads
Automotive systems
Continuous current is limited by bondwires.
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
gate-drain charge V
Conditions
T
V
see
T
V
T
see
I
R
T
V
D
j
mb
j
j(init)
GS
GS
GS
DS
GS
≥ 25 °C; T
= 25 °C; see
= 55 A; V
Figure
Figure 5
= 25 °C; see
= 10 V; T
= 10 V; I
= 5 V; I
= 24 V
= 50 Ω; V
= 25 °C; unclamped
1; see
D
sup
j
D
≤ 175 °C
= 25 A;
mb
GS
= 10 A;
≤ 30 V;
Figure
= 25 °C;
= 10 V;
Figure 2
Figure 3
4;
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
10
-
14
Max Unit
30
55
102
13
267
-
V
A
W
mΩ
mJ
nC

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BUK6213-30A Summary of contents

Page 1

... BUK6213-30A N-channel TrenchMOS intermediate level FET Rev. 03 — 2 February 2011 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 February 2011 BUK6213-30A Graphic symbol mbb076 Version SOT428 © NXP B.V. 2011. All rights reserved ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 February 2011 BUK6213-30A Min - - -20 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µ -55 -55 [1] ...

Page 4

... ° see Figure 4; see Figure 5 All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 February 2011 BUK6213-30A N-channel TrenchMOS intermediate level FET = 10 μ 100 μ 100 ms V (V) DS Min Typ - - - 71 ...

Page 5

... A/µ - 03nk60 label 150 200 I (A) D Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 February 2011 BUK6213-30A N-channel TrenchMOS intermediate level FET Min Typ - - - 1490 - 505 - 325 = ...

Page 6

... min min 5.46 0.56 6.22 6.73 4.45 4.0 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 February 2011 BUK6213-30A N-channel TrenchMOS intermediate level FET min 10.4 2.95 0.5 2.285 4.57 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 7

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK6213-30A v.3 20110202 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 8

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 February 2011 BUK6213-30A © NXP B.V. 2011. All rights reserved ...

Page 9

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 2 February 2011 BUK6213-30A Trademarks © NXP B.V. 2011. All rights reserved ...

Page 10

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 February 2011 Document identifier: BUK6213-30A ...

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