BUK6213-30A NXP Semiconductors, BUK6213-30A Datasheet - Page 5

• Manufacturer Part Number: BUK6213-30A
• Description: Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK6213-30A
Product data sheet
Symbol
I
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
d(on)
r
d(off)
f
rr
Fig 4.
D
S
SD
iss
oss
rss
G(tot)
GS
GD
r
R
(mΩ)
DSon
30
20
10
0
of drain current; typical values.
Drain-source on-state resistance as a function
0
Characteristics
Parameter
drain leakage current
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
50
5
4.5
4
3.5
…continued
100
label is V
150
Conditions
V
see
I
I
V
T
V
R
measured from drain to center of die
measured from source lead to source
bond pad
I
I
V
All information provided in this document is subject to legal disclaimers.
D
D
S
S
10
20
j
DS
GS
DS
GS
GS
G(ext)
I
= 25 °C
= 15 A; V
= 20 A; dI
= 25 A; V
= 25 A; V
D
(V)
(A)
Figure
03nk60
= 30 V; V
= 25 V; R
= 0 V; V
= -10 V; V
= 10 Ω
Rev. 03 — 2 February 2011
200
4; see
DS
DS
GS
S
DS
/dt = -100 A/µs;
GS
L
DS
= 24 V; V
= 24 V; V
= 0 V; T
= 1.2 Ω; V
= 25 V; f = 1 MHz;
= 0 V; T
= 25 V
Figure 5
Fig 5.
j
= 25 °C
GS
GS
j
GS
= 175 °C;
= 10 V
= 5 V
a
1.5
0.5
N-channel TrenchMOS intermediate level FET
= 10 V;
2
1
0
−60
factor as a function of junction temperature
Normalized drain-source on-state resistance
0
BUK6213-30A
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
60
Typ
-
44
26
7
14
1490
505
325
12
95
75
105
2.5
7.5
0.85
49
27
120
© NXP B.V. 2011. All rights reserved.
T
j
( ° C)
606
-
Max
500
-
-
-
-
1986
445
-
-
-
-
-
1.2
-
-
03aa27
180
Unit
µA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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