BSH207 NXP Semiconductors, BSH207 Datasheet
BSH207
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BSH207 Summary of contents
Page 1
... This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH207 is supplied in the SOT457 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) ...
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... GS G Resistive load -9 MHz GS DS CONDITIONS ˚ -0. -0.5 A; -dI /dt = 100 -9 Product specification BSH207 MIN. TYP. MAX. UNIT - -0.4 -0 150˚C -0 120 - 117 150 - 140 180 - 175 230 1.5 4 ...
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... j-a p BSH207 -4 -1.8 V -2.5 V -1.3 V -1.2 V -1.1 V -0.9 V VGS = -0.8 V -0.5 -1 -1.5 Drain-Source Voltage, VDS ( f(V ); parameter -1V -1 -1.3 V -0.9 V -2.5 V VGS = -4.5V -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 Drain Current f(I ); parameter V DS(ON BSH207 BSH207 ˚ BSH207 -1 ˚C . Rev 1.000 ...
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... -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 Gate-Source Voltage, VGS (V) Fig.11. Sub-threshold drain current f(V ; conditions ˚C D GS) j Capacitances, Ciss, Coss, Crss (pF) Ciss Coss Crss -0.1 -1.0 -10.0 Drain-Source Voltage, VDS ( iss ); conditions MHz DS GS BSH207 125 150 = BSH207 -100 oss rss Rev 1.000 ...
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... Fig.13. Typical turn-on gate-charge characteristics f August 1998 BSH207 5 4.5 4 3.5 3 2.5 2 1 Product specification Source-Drain Diode Current, IF (A) 150 0.2 0.4 0.6 0.8 1 Drain-Source Voltage, VSDS (V) Fig.14. Typical reverse diode current. = f(V ); conditions parameter T SDS GS BSH207 BSH207 1.2 1.4 j Rev 1.000 ...
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... scale 0.40 0.26 3.1 1.7 3.0 0.6 0.33 0.95 0.25 0.10 2.7 1.3 2.5 0.2 0.23 REFERENCES IEC JEDEC EIAJ SC-74 Fig.15. SOT457 surface mounting package. 6 Product specification SOT457 detail 0.2 0.2 0.1 EUROPEAN ISSUE DATE PROJECTION 97-02-28 BSH207 Rev 1.000 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 7 Product specification BSH207 Rev 1.000 ...