BSH207 NXP Semiconductors, BSH207 Datasheet - Page 6

Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology

BSH207

Manufacturer Part Number
BSH207
Description
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH207
Manufacturer:
NXP
Quantity:
45 000
Philips Semiconductors
MECHANICAL DATA
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 1998
P-channel enhancement mode
MOS transistor
discharge during transport or handling.
Plastic surface mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT457
1.1
0.9
A
0.013
0.1
A 1
y
pin 1
index
0.40
0.25
b p
6
1
IEC
Fig.15. SOT457 surface mounting package.
e
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
0.95
3
e
w
B
M
H E
3.0
2.5
SC-74
scale
B
EIAJ
6
1
0.6
0.2
L p
A
0.33
0.23
Q
A 1
2 mm
0.2
v
H E
E
0.2
w
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
A
c
ISSUE DATE
X
v
97-02-28
M
A
SOT457
Product specification
BSH207
Rev 1.000

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