BSH207 NXP Semiconductors, BSH207 Datasheet - Page 4

• Manufacturer Part Number: BSH207
• Description: Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
August 1998
P-channel enhancement mode
MOS transistor
Fig.9. Normalised drain-source on-state resistance.
-4.5
-3.5
-2.5
-1.5
-0.5
8
7
6
5
4
3
2
1
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
-5
-4
-3
-2
-1
1
0
Fig.8. Typical transconductance, T
0
Transconductance, gfs (S)
VDS > ID X RDS(on)
0
Normalised Drain-Source On Resistance
0
Drain Current, ID (A)
-0.2
VDS > ID X RDS(on)
RDS(ON) @ 25C
Fig.7. Typical transfer characteristics.
RDS(ON) @ Tj
-0.4
25
-0.6
R
-0.5
DS(ON)
-0.8
Gate-Source Voltage, VGS (V)
Junction Temperature, Tj (C)
50
Drain Current, ID (A)
-1
/R
I
D
g
fs
= f(V
DS(ON)25 ˚C
-1.2
= f(I
75
-1
Tj = 25 C
-1.4
GS
D
)
)
-1.6
Tj = 25 C
VGS = -4.5 V
= f(T
100
-1.8
j
-1.5
)
150 C
-2
j
= 25 ˚C .
125
-2.2
-2.5 V
BSH207
150 C
BSH207
-2.4
-1.8 V
-2.6
150
-2
4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
1000
100
0
V
10
Fig.12. Typical capacitances, C
C = f(V
0
GS(TO)
-0.1
Threshold Voltage, VGS(to), (V)
-1
Capacitances, Ciss, Coss, Crss (pF)
Drain Current, ID (A)
Fig.11. Sub-threshold drain current.
-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1
Fig.10. Gate threshold voltage.
I
= f(T
D
25
DS
= f(V
); conditions: V
j
Gate-Source Voltage, VGS (V)
); conditions: I
Drain-Source Voltage, VDS (V)
Junction Temperature, Tj (C)
GS)
50
-1.0
; conditions: T
75
minimum
typical
GS
D
= 1 mA; V
= 0 V; f = 1 MHz
-10.0
100
Product specification
j
VDS = -5 V
= 25 ˚C
Tj = 25 C
Crss
Ciss
Coss
iss
, C
BSH207
125
DS
oss
BSH207
BSH207
, C
= V
0
Rev 1.000
-100.0
rss
GS
150
.