BSS84AKS NXP Semiconductors, BSS84AKS Datasheet - Page 3

• Manufacturer Part Number: BSS84AKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BSS84AKS
Product data sheet
Symbol
Per transistor
V
V
I
I
P
Per device
P
T
T
T
Source-drain diode
I
ESD maximum rating
V
D
DM
S
j
amb
stg
DS
GS
tot
tot
ESD
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 May 2011
Conditions
T
V
V
T
T
T
T
T
HBM
j
amb
amb
sp
amb
amb
GS
GS
= 25 °C
= 25 °C
= -10 V; T
= -10 V; T
= 25 °C; single pulse; t
= 25 °C
= 25 °C
= 25 °C
amb
amb
50 V, 160 mA dual P-channel Trench MOSFET
= 25 °C
= 100 °C
p
≤ 10 µs
[1]
[1]
[2]
[1]
[2]
[1]
[3]
BSS84AKS
Min
-
-20
-
-
-
-
-
-
-
-55
-55
-65
-
-
© NXP B.V. 2011. All rights reserved.
2
150
150
Max
-50
20
-160
-100
-640
280
320
990
445
150
-160
1000
.
Unit
V
V
mA
mA
mA
mW
mW
mW
mW
°C
°C
°C
mA
V
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