BSS84AKS NXP Semiconductors, BSS84AKS Datasheet - Page 8

• Manufacturer Part Number: BSS84AKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS84AKS
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
-0.20
-0.15
-0.10
-0.05
I
D
12
0
8
4
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics; drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
Drain-source on-state resistance as a function
0
0
j
j
= 25 °C
= 25 °C
V
GS
GS
GS
GS
GS
GS
= -10 V -4.0 V
= -3.0 V
= -3.5 V
= -4.0 V
= -5.0 V
= -10.0 V
-0.1
(1)
-1
(2)
-0.2
-3.5 V
-2
(3)
-3.0 V
-0.3
-3
All information provided in this document is subject to legal disclaimers.
(4)
(5)
V
001aao124
001aao126
I
-2.5 V
DS
D
(A)
(V)
-0.4
-4
Rev. 1 — 23 May 2011
Fig 7.
Fig 9.
R
DSon
(Ω)
(A)
-10
-10
-10
-10
I
D
14
10
50 V, 160 mA dual P-channel Trench MOSFET
-3
-4
-5
-6
6
2
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
0
0
D
j
= 25 °C; V
= -200 mA
j
j
= 150 °C
= 25 °C
-0.5
-2
DS
-1.0
= -5 V
-4
(1)
-1.5
-6
BSS84AKS
(2)
-2.0
© NXP B.V. 2011. All rights reserved.
-8
001aao125
001aao127
V
V
(1)
(2)
(3)
GS
GS
(V)
(V)
-2.5
-10
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