BSS84AKS NXP Semiconductors, BSS84AKS Datasheet - Page 9

• Manufacturer Part Number: BSS84AKS
• Description: Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS84AKS
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
-0.20
-0.15
-0.10
-0.05
I
D
-3
-2
-1
0
0
-60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= -0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
x R
-1
0
DSon
DS
= V
60
-2
(2)
GS
(1)
(1)
(2)
(3)
120
-3
(1)
All information provided in this document is subject to legal disclaimers.
V
001aao128
001aao130
T
GS
j
(°C)
(V)
(2)
180
-4
Rev. 1 — 23 May 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
2.0
1.5
1.0
0.5
10
50 V, 160 mA dual P-channel Trench MOSFET
0
1
-10
2
-60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz, V
(1) C
(2) C
(3) C
-1
iss
oss
rss
0
GS
-1
(1)
(2)
(3)
= 0 V
60
BSS84AKS
-10
120
V
© NXP B.V. 2011. All rights reserved.
DS
001aao129
T
001aao131
j
(V)
(°C)
-10
180
2
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