PSMN1R9-25YLC NXP Semiconductors, PSMN1R9-25YLC Datasheet - Page 5

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN1R9-25YLC

Manufacturer Part Number
PSMN1R9-25YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
6. Thermal characteristics
Table 6.
PSMN1R9-25YLC
Product data sheet
Symbol
R
Fig 4.
Fig 5.
th(j-mb)
Z
(K/W)
th(j-mb)
(A)
I
D
10
10
10
10
10
10
10
10
10
-1
-2
-3
-1
1
4
3
2
1
10
1e-6
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
δ = 0.5
0.2
0.05
0.02
0.1
Thermal characteristics
single shot
Parameter
thermal resistance from
junction to mounting base
10
-5
Limit R
DSon
= V
DS
All information provided in this document is subject to legal disclaimers.
10
/ I
1
D
-4
Conditions
see
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
Figure 5
DC
10
-3
10
10
-2
PSMN1R9-25YLC
Min
-
V
t
100 μ s
1 ms
10 ms
100 ms
DS
p
10
=10 μ s
P
(V)
-1
Typ
0.92
t
p
T
© NXP B.V. 2011. All rights reserved.
t
p
003aaf826
003aaf827
δ =
(s)
Max
1.06
t
T
p
t
10
1
2
Unit
K/W
5 of 15

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