PSMN1R9-25YLC NXP Semiconductors, PSMN1R9-25YLC Datasheet - Page 8

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN1R9-25YLC

Manufacturer Part Number
PSMN1R9-25YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN1R9-25YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
(S )
I
g
10
D
10
10
10
10
10
200
160
120
fs
80
40
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
1
Min
40
Typ
60
Max
2
80
V
All information provided in this document is subject to legal disclaimers.
003a a f 834
003a a f 833
GS
I
D
(V)
(A)
100
3
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS (th)
(V)
I
D
100
80
60
40
20
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
T
j
= 150 °C
0
1
PSMN1R9-25YLC
I
D
= 5mA
60
2
1mA
T
j
= 25 °C
120
3
© NXP B.V. 2011. All rights reserved.
V
003a a f 836
003a a f 832
GS
T
j
(°C)
(V)
180
4
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