PSMN1R9-25YLC NXP Semiconductors, PSMN1R9-25YLC Datasheet - Page 7

• Manufacturer Part Number: PSMN1R9-25YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
PSMN1R9-25YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
100
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
4.5
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
0.5
3.0
…continued
1
2.8
1.5
V
GS
Conditions
V
T
I
see
I
V
V
V
All information provided in this document is subject to legal disclaimers.
S
S
003a a f 828
j
GS
DS
GS
DS
(V) =
V
= 25 °C
= 25 A; V
= 25 A; dI
DS
Figure 17
= 12 V
= 12 V; see
= 0 V; V
= 0 V; I
(V)
2.6
2.4
2.2
2
Rev. 1 — 2 May 2011
N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using
S
GS
S
DS
/dt = -100 A/µs; V
= 25 A; dI
= 0 V; T
= 12 V; f = 1 MHz;
Figure 18
Fig 7.
j
S
= 25 °C;
/dt = -100 A/µs;
R
(mΩ)
DS on
10
8
6
4
2
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
4
PSMN1R9-25YLC
Min
-
-
-
-
-
-
8
Typ
16
0.8
34
28
20
14
12
© NXP B.V. 2011. All rights reserved.
003a a f 829
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
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