PSMN9R5-30YLC NXP Semiconductors, PSMN9R5-30YLC Datasheet - Page 8

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN9R5-30YLC

Manufacturer Part Number
PSMN9R5-30YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN9R5-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(S)
g
(A)
I
fs
D
10
10
10
10
10
10
60
50
40
30
20
10
0
-1
-2
-3
-4
-5
-6
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
Min
1
N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology
Typ Max
40
2
V
003aag186
All information provided in this document is subject to legal disclaimers.
I
003aag188
D
GS
(A)
(V)
Rev. 2 — 1 September 2011
60
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
GS(th)
(V)
(A)
I
D
60
50
40
30
20
10
3
2
1
0
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
0
1
PSMN9R5-30YLC
T
j
= 150 ° C
I
D
= 5mA
60
2
1mA
T
j
120
= 25 ° C
3
© NXP B.V. 2011. All rights reserved.
003aag189
V
T
003aag187
j
GS
(DC)
(V)
180
4
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