BLF7G24LS-100 NXP Semiconductors, BLF7G24LS-100 Datasheet - Page 11

100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24LS-100

Manufacturer Part Number
BLF7G24LS-100
Description
100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet

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BLF7G24LS-100
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Part Number:
BLF7G24LS-100
Quantity:
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NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF7G24L-100_7G24LS-100
Product data sheet
Document ID
BLF7G24L-100_7G24LS-100 v.4 20110722
Modifications:
BLF7G24L-100_7G24LS-100 v.3 20110405
BLF7G24L-100_7G24LS-100 v.2 20100714
BLF7G24L-100_7G24LS-100 v.1 20100414
Revision history
Table 8.
Acronym
3GPP
CCDF
CW
DPCH
IS-95
ESD
LDMOS
LDMOST
N-CDMA
PAR
RF
VSWR
W-CDMA
Release date Data sheet status
Abbreviations
The status of this data sheet has been changed to Product data sheet
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Interim Standard 95
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
BLF7G24L-100; BLF7G24LS-100
Product data sheet
Preliminary data sheet -
Objective data sheet
Objective data sheet
Rev. 4 — 22 July 2011
Change notice Supersedes
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-
-
BLF7G24L-100_7G24LS-100
v.3
BLF7G24L-100_7G24LS-100
v.2
BLF7G24L-100_7G24LS-100
v.1
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Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
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