BLF7G24LS-100 NXP Semiconductors, BLF7G24LS-100 Datasheet - Page 6

• Manufacturer Part Number: BLF7G24LS-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G24L-100_7G24LS-100
Product data sheet
Fig 7.
(dB)
G
(1) f = 2300 MHz
(2) f = 2400 MHz
19.5
18.5
17.5
16.5
p
0
V
Pulsed CW power gain as a function of load
power; typical values
DS
= 28 V; I
(2)
(1)
7.3 Pulsed CW
40
Dq
= 900 mA.
80
120
All information provided in this document is subject to legal disclaimers.
P
001aan501
L
(W)
BLF7G24L-100; BLF7G24LS-100
160
Rev. 4 — 22 July 2011
Fig 8.
(%)
η
(1) f = 2300 MHz
(2) f = 2400 MHz
D
60
50
40
30
20
10
0
V
Pulsed CW drain efficiency as a function of
load power; typical values
DS
= 28 V; I
40
Dq
= 900 mA.
(2)
(1)
80
Power LDMOS transistor
120
© NXP B.V. 2011. All rights reserved.
P
001aan502
L
(W)
160
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