STPS20SM60C STMicroelectronics, STPS20SM60C Datasheet - Page 2

• Manufacturer Part Number: STPS20SM60C
• Description: Power Schottky rectifier
• Manufacturer: STMicroelectronics

Characteristics
1
2/11
Characteristics
Table 2.
1. For temperature or pulse time duration deratings, please refer to
2. See
3.
Table 3.
When the two diodes 1 and 2 are used simultaneously:
ΔT
Symbol
Symbol
P
V
V
I
R
V
F(RMS)
I
R
ARM
ARM
ASM
I
j
F(AV)
T
FSM
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
(diode 1) = P(diode 1) x R
th(j-c)
RRM
th(c)
T
dPtot
stg
dTj
j
(1)
(2)
(2)
Figure 14
<
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ = 0.5
Surge non repetitive
forward current
Repetitive peak avalanche power
Maximum repetitive peak
avalanche voltage
Maximum single pulse
peak avalanche voltage
Storage temperature range
Maximum operating junction temperature
Junction to case
Coupling
Rth(j-a)
1
Absolute ratings (limiting values, per diode, at T
otherwise specified)
Thermal parameters
condition to avoid thermal runaway for a diode on its own heatsink
th(j-c)
Doc ID 022015 Rev 1
(Per diode) + P(diode 2) x R
Parameter
TO-220AB,
I
TO-220FPAB
t
t
t
Parameter
2
p
p
p
PAK, D
= 10 ms sine-wave
< 1 µs, T
< 1 µs, T
TO-220AB
I
TO-220FPAB
TO-220AB, I
TO-220FPAB
2
PAK, D
2
PAK
j
j
< 150 °C, I
< 150 °C, I
(3)
2
T
T
T
T
T
PAK
c
c
c
c
j
= 25 °C, t
2
= 135 °C
= 130 °C
= 110 °C
= 90 °C
PAK, D
Figure 4
AR
AR
per diode
total
per diode
total
< 32.6 A
< 32.6 A
2
p
PAK
and 5. More details regarding the
= 1 µs
th(c)
Per diode
Per device
Per diode
Per device
amb
= 25 °C unless
-65 to +175
Value
2.00
1.13
4.90
4.05
0.25
3.20
STPS20SM60C
Value
8700
220
150
60
30
10
20
10
20
80
80
°C/W
°C/W
Unit
Unit
°C
°C
W
V
A
A
A
V
V