STPS20H100C STMicroelectronics, STPS20H100C Datasheet - Page 4

• Manufacturer Part Number: STPS20H100C
• Description: 100 V power Schottky rectifier
• Manufacturer: STMicroelectronics

Specifications of STPS20H100C

• Insulated Package: TO-220FPAB

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Figure 1.
Figure 3.
Figure 5.
8
6
4
2
0
0.001
200
180
160
140
120
100
0.01
80
60
40
20
0
0.1
0
1E-3
P
1
0.01
F(AV)
I (A)
M
P
I
P
M
ARM
ARM
(W)
(1µs)
(t p )
2
δ
=0.5
t
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
δ = 0.05
1E-2
4
1
δ = 0.1
I
F(AV)
t(s)
6
(A)
δ = 0.2
10
TO-220AB, D PAK, I PAK
1E-1
8
δ = 0.5
δ
2
=tp/T
100
10
δ = 1
Doc ID 5386 Rev 7
2
T
T =125°C
T =50°C
T =75°C
C
t (µs)
C
C
p
tp
1000
1E+0
12
Figure 2.
Figure 4.
1.2
0.8
0.6
0.4
0.2
Figure 6.
12
10
140
120
100
4
1
0
8
6
2
0
80
60
40
20
25
1E-3
0
P
0
I
F(AV)
ARM
I (A)
P
M
ARM
I
M
δ
(25 °C)
=tp/T
(A)
(T )
R
j
25
th(j-a)
δ
=0.5
T
t
=40°C/W
50
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
tp
R
th(j-a)
50
=15°C/W
1E-2
75
75
T
amb
t(s)
R
(°C)
th(j-a)
100
=R
100
th(j-c)
1E-1
125
TO-220FPAB
125
TO-220AB
TO-220FPAB
150
T =125°C
T =50°C
T =75°C
j
j
j
T (°C)
j
1E+0
175
150